dimensions in inches and (millimeters) smb/do-214aa f eatures for surface mounted applications in order to optimize board space low profile package built-in strain relief glass passivated junction low inductance high temperature soldering guaranteed: 260 o c / 10 seconds at terminals plastic package has underwriters laboratory flammability classification 94v-0 m echanical data case: molded p lastic over p assivated j unction polarity: color band denotes positive end (cathode) standard packaging: 12mm tape we ight: 0.093 gram m aximum ratings and electrical characteristics rating at 25 o c ambient temperature unless otherwise specified. type number symbol value units dc power dissipation at t l =75 o c, measure at zero lead length derate above 75 o c p d 3.0 40 watts mw/ o c dc power dissipation @ t a =25 o c derate above 25 o c p d 550 4.4 mw mw/ o c thermal resistance from junction-to-lead r jl 25 o c/w thermal resistance from junction-to-ambient r ja 226 o c/w operating and storage temperature range t j , t stg -65 to + 150 o c maximum ratings are those values beyond which device damage can occur. maximum ratings applied to the device are individual st ress limit values (not normal operating conditions) and are not valid simultaneously. if these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be attached. 1smb5926-1smb5956 3.0w surface mount silicon zener diode http://www.luguang.cn mail:lge@luguang.cn
electrical characteristics (ta=25 o c unless otherwise noted) device i zm device marking i zt (note 1) code z zt @ i zt i r vr i ztc nom (v) min (v) max (v) ma ohms ohms ma ua v ma(dc ) 1smb5926 926b 11 10.45 11.55 34.1 5.5 550 0.25 1.0 8.4 136 1smb5927 927b 12 11.4 12.6 31.2 6.5 550 0.25 1.0 9.1 125 1smb5928 928b 13 12.35 13.65 28.8 7 550 0.25 1.0 9.9 115 1smb5929 929b 15 14.25 15.75 25.0 9 600 0.25 1.0 11.4 100 1smb5930 930b 16 15.2 16.8 23.4 10 600 0.25 1.0 12.2 93 1smb5931 931b 18 17.1 18.9 20.8 12 650 0.25 1.0 13.7 83 1smb5932 932b 20 19 21 18.7 14 650 0.25 1.0 15.2 75 1smb5933 933b 22 20.9 23.1 17.0 17.5 650 0.25 1.0 16.7 66 1smb5934 934b 24 22.8 25.2 15.6 19 700 0.25 1.0 18.2 62 1smb5935 935b 27 25.65 28.35 13.9 23 700 0.25 1.0 20.6 55 1smb5936 936b 30 28.5 31.5 12.5 28 750 0.25 1.0 22.8 50 1smb5937 937b 33 31.35 34.65 11.4 33 800 0.25 1.0 25.1 45 1smb5938 938b 36 34.2 37.8 10.4 38 850 0.25 1.0 27.4 41 1smb5939 939b 39 37.05 40.95 9.6 45 900 0.25 1.0 29.7 38 1smb5940 940b 43 40.85 45.15 8.7 53 950 0.25 1.0 32.7 34 1smb5941 941b 47 44.65 49.35 8.0 67 1000 0.25 1.0 35.8 31 1smb5942 942b 51 48.45 53.55 7.3 70 1100 0.25 1.0 38.8 29 1smb5943 943b 56 53.2 58.8 6.7 86 1300 0.25 1.0 42.6 26 1smb5944 944b 62 58.9 65.1 6.0 100 1500 0.25 1.0 47.1 24 1smb5945 945b 68 64.6 71.4 5.5 120 1700 0.25 1.0 51.7 22 1smb5946 946b 75 71.25 78.75 5.0 140 2000 0.25 1.0 56.0 20 1smb5947 947b 82 77.9 86.1 4.6 160 2500 0.25 1.0 62.2 18 1smb5948 948b 91 6.45 95.55 4.1 200 3000 0.25 1.0 69.2 16 1smb5949 949b 100 95 105 3.7 250 3100 0.25 1.0 76.0 15 1smb5950 950b 110 1.4.5 11505 3.4 300 4000 0.25 1.0 83.6 13 1SMB5951 951b 120 114 126 3.1 380 4500 0.25 1.0 91.2 12 1smb5952 952b 130 123.5 136.5 2.9 450 5000 0.25 1.0 98.8 11 1smb5953 953b 150 142.5 157.5 2.5 600 6000 0.25 1.0 114.0 10 1smb5954 954b 160 152 168 2.3 700 6500 0.25 1.0 121.6 9 1smb5955 955b 180 171 189 2.1 900 7000 0.25 1.0 137 8 1smb5956 956b 200 190 210 1.9 1200 8000 0.25 1.0 152 7 notes: 1. tolerance and type number designation the type numbers listed indicate a tolerance of 5%. 2. zener voltage (vz) measurement nominal zener voltage is measured with the device junction in thermal equilibrium with ambient temperature at 25 o c. 3. zener impedance (zz) derivation: zzt and zzk are measured by dividing the ac voltage drop across the device by the ac current applied. the specified limits are for iz(ac) = 0.1 iz(dc) wi th the ac frequency = 60 hz. zener voltage range (note 2) zener impedance (note 3) leakage current z zk @ i zk v z @ i zt 1smb5926-1smb5956 3.0w surface mount silicon zener diode http://www.luguang.cn mail:lge@luguang.cn
6 5 4 3 2 1 0 05 0 75 100 125 150 25 ratings and characteristic curves (1smb5926 thru 1smb5956) fig.1- steady state power derating fig.5- vz = 3.3 thru 10 volts fig.3- zener voltage - to 12 voltages t, temperature( c) o v zener voltage (volts) z , p maximum power dissipation (watts) d , i zener current (ma) z , o temperature coefficient (mv/ c) vz , o t a t l 0 0.1 12 3 45678 1 10 100 v zener voltage (volts) z , v@i zzt 2 10 8 6 4 2 0 -2 -4 fig.2- maximum surge power fig.4- zener voltage - 14 to 200 voltages o temperature coefficient (mv/ c) vz , o v zener voltage (volts) z , 10 10 200 200 10 12 46 8 v@i zzt 100 20 30 50 70 20 30 50 70 100 910 fig.6- vz = 12 thru 82 volts v zener voltage (volts) z , i zener current (ma) z , 0 0.1 10 20 30 40 50 60 70 80 1 10 100 90 100 p , peak surge power (watts) pk pw, pulse width (ms) 0.1 1 10 10 20 30 50 100 200 300 500 1000 100 20 50 25 0.2 0.5 1smb5926-1smb5956 3.0w surface mount silicon zener diode http://www.luguang.cn mail:lge@luguang.cn
fig.9- capacitance curve fig.10- typical pulse rating curve fig.11- pulse waveform fig.12- pulse waveform c, capacitance (pf) p , peak power (kw) pk ippm, peak pulse current (%) breakdown voltage (volts) tp, pulse width (ms) t, time (ms) t, time (ms) measured @ zero bias measured @ v/2 z t = 25 c j o 10 100 10 100 1000 0.01 0.01 0.1 1 10 0.1 1 10 nonrepetitive, exponential pulse waveform, t = 25 c j o t = 25 c pw (i ) is defined as the point where the peak current decays to 50% of i a d o pp- 10 s peak value i ppm half value - i /2 pp 10/1000 s waveform as defined by r.e.a. t d 0 0 12 345 20 40 60 80 100 120 ippm, peak pulse current (%) t=8 s 0.5 i peak 0.9 i peak 0.1 i peak t 20 s 8/20 s waveform as defined by ansi c62.1 and iec 801-5, 0 0 0.02 0.04 0.06 0.08 0.1 20 40 60 80 100 120 ratings and characteristic curves (1smb5926 thru 1smb5956) fig.8- effect of zener current fig.7- effect of zener voltage i, z zener test current (ma) i, z zener current (ma) z , dynamic impedance (ohms) z z , dynamic impedance (ohms) z 0.5 12 5 10 20 50 100 1.0 2.0 5.0 10 20 50 100 200 500 1000 5 10 20 30 50 70 100 2 10 20 50 70 100 200 7 3 5 7 30 200 500 t = 25 c i (rms)= 0.1 i (dc) j zz o 91v v = 150v z 62v 22v 12v 6.8v i (rms)= 0.1 i (dc) zz 20ma 10ma i (dc) = z 1ma 1smb5926-1smb5956 3.0w surface mount silicon zener diode http://www.luguang.cn mail:lge@luguang.cn
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